Abstract
Resonant tunneling transistors can perform more logic per transistor than conventional transistors. By exploiting their unique characteristic, circuit functional density and speed can be increased without changing the lithographic design rule. In addition, resonant tunneling transistors, in which the control electrode directly modulates the carrier transport, scale to smaller dimensions than conventional transistors. In this paper, the measured negative differential resistance and transconductance characteristics of several resonant tunneling transistors are described.
© 1993 Optical Society of America
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