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Physics of Electron Transport in Ultra High Speed InP/GaInAs Heterojunction Bipolar Transistors

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Abstract

New physical phenomena InP/Ga0.47In0.53As Hetero-junction Bipolar Transistors are presented. Ballistic versus diffusive base transport is discussed, as well as impact ionization and transport across an energy barrier in the collector.

© 1993 Optical Society of America

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