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We have demonstrated lateral diffusion measurements oí photo-excited electron-hole pairs at various excitation densities for non-doped and p-type- modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well structures at 77K, using a new all-optical time-of-flight technique with a single-mode optical fiber probe. Systematic measurements at various electron and hole densities showed that strong electron-hole scattering reduces the diffusivity, but that exciton formation weakens scattering and enhances the diffusivity.
© 1993 Optical Society of America
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