Carrier Scattering and Excitonic Effects on Electron-Hole-Pair Diffusion Measured with Optical Fiber Probing Technique

Hidefumi Akiyama; Toshio Matsusue; Hiroyuki Sakaki

doi:10.1364/UEO.1993.D7

Ultrafast Electronics and Optoelectronics
OSA Proceedings Series (Optica Publishing Group, 1993),
paper D7
•https://doi.org/10.1364/UEO.1993.D7

Carrier Scattering and Excitonic Effects on Electron-Hole-Pair Diffusion Measured with Optical Fiber Probing Technique

Hidefumi Akiyama, Toshio Matsusue, and Hiroyuki Sakaki

Ultrafast Electronics and Optoelectronics 1993

San Francisco, California United States
ISBN: 1-55752-275-8

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Physics of Semiconductors (D)

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H. Akiyama, T. Matsusue, and H. Sakaki, "Carrier Scattering and Excitonic Effects on Electron-Hole-Pair Diffusion Measured with Optical Fiber Probing Technique," in Ultrafast Electronics and Optoelectronics, J. Shah and U. Mishra, eds., Vol. 14 of OSA Proceedings Series (Optica Publishing Group, 1993), paper D7.

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Abstract

We have demonstrated lateral diffusion measurements oí photo-excited electron-hole pairs at various excitation densities for non-doped and p-type- modulation-doped GaAs/Al_0.3Ga_0.7As multiple quantum well structures at 77K, using a new all-optical time-of-flight technique with a single-mode optical fiber probe. Systematic measurements at various electron and hole densities showed that strong electron-hole scattering reduces the diffusivity, but that exciton formation weakens scattering and enhances the diffusivity.

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