Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > UEO > 1993 > G > G4

Photoconductive Sampling Circuits Using Low-Temperature GaAs Interdigitated Switches

J. Allam, K. Ogawa, J. White, N.de B. Baynes, J. R. A. Cleaver, I. Ohbu, T. Tanoue, and T. Mishima

Not Accessible

Your library or personal account may give you access

Abstract

Characterisation of electronic devices at frequencies up to several hundred GHz can be achieved using electrooptic1 or photoconductive sampling. GaAs grown at low temperature by molecular beam epitaxy (LT GaAs) is a suitable material for fabrication of switches for photoconductive sampling due to its ultrafast carrier lifetime (~ 1 ps or less)2, high breakdown voltage, and low on-state resistivity. High-responsivity LT GaAs photodetectors have been demonstrated using submicron interdigitated structures3.

© 1993 Optical Society of America

PDF Article
More Like This
Subpicosecond cryogenic electrical response of unannealed low-temperature-grown GaAs

H. H. Wang, J. F. Whitaker, A. Chin, J. Mazurowski, and J. M. Ballingall
CWJ80 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Monolithic integration of low-temperature-grown GaAs and high-mobility 2DEG for ultrafast photonic circuits

J. Allam, K. Ogawa, A.P. Heberle, N. de B. Baynes, J.R.A. Cleaver, T. Mishima, and I. Ohbu
UTUC4 Ultrafast Electronics and Optoelectronics (UEO) 1995

High-Bandwith Transmission Lines Using Low-Temperature-Grown-GaAs-on Quartz

H. Cheng and J. F. Whitaker
H1 Ultrafast Electronics and Optoelectronics (UEO) 1993

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use