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Coherent Charge Oscillations in Bulk GaAs

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Abstract

Recently, transistor-like three terminal (launcher-base-detector) devices with base regions of dimensions comparable to (or less than) typical mean free path lengths have been used to study transport in the near ballistic regime,1,2 and femtosecond techniques with temporal resolutions less than the mean scattering times have been used to investigate velocity overshoot3 and the nearly ballistic acceleration of electrons4,5. In addition, coherent oscillatory electronic wavepackets have been observed in coupled quantum-wells6, and Bloch oscillations have been observed in uperlattices7,8. Here, we report the first direct observation of coherent charge oscillations in a bulk semiconductor in the presence of a constant built-in field, and we confirm that these oscillations are the result of ballistic charge transport by separately demonstrating that they occur on a time scale short compared to the measured dephasing time.

© 1995 Optical Society of America

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