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Hole Relaxation in p-type InGaAs/AlGaAs Quantum Wells Observed by Ultrafast Mid-Infrared Spectroscopy

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Abstract

The mechanism of intersubband relaxation in quantum wells (QWs) is very important from a fundamental physics perspective and for device applications. Measurements performed by infrared bleaching [1-3] and anti-Stokes Raman scattering [4] techniques in n-type QWs have revealed a relaxation time ranging from less than 1 ps to 10 ps when the well is narrow enough to make the intersubband transition energy larger than the LO phonon energy.

© 1995 Optical Society of America

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