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Optoelectronic Characterization of Resonant Tunneling Diodes

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Abstract

Resonant tunneling diodes (RTD’s) have been intensively studied for their application to ultrahigh-speed/frequency circuit components such as oscillators [1], triggering devices [2], and pulse generators [3]. Switching time from peak to valley in the negative resistance region is one of their important characteristics from a practical viewpoint as well as being of physical interest[4]–[9]. Since the RTD’s switching time has already outpaced the capability of electronic sampling oscilloscopes (7-ps resolution) to measure it, an electro-optic sampling (EOS) technique has been commonly used.

© 1995 Optical Society of America

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