Abstract

Todays and future wireless communication systems, e.g. mobile phones and wireless LANs, require transistors with improved high frequency and low noise performance. At the moment the frequencies for these applications are in the 0.9–2.4 GHz range, but due to the steadily growing data flow and the required faster transfer speeds the frequency range of communication systems will be extended to 10 or 20 GHz in the near future. Homo silicon device cricuits seem to be restricted to below 2 GHz. Hence, SiGe-HBTs could fill the gap between 2 GHz mass market and above 12 GHz niche applications. SiGe-HBTs offer the potential of increased performance in both low power low noise front-ends, and in high frequency power amplifiers up to 20 GHz. The increasing interest in SiGe-HBTs is a result of their excellent RF performance with recently reported record f_T and f_max values up to 120 GHz [1,2,3], noise figures of 0.9 dB at 10 GHz [4], and a low noise corner frequency of 300 Hz [5]. In addition, SiGe-HBT fabrication is compatible to standard silicon bipolar and CMOS technology.

© 1995 Optical Society of America