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Manufacturable 200GHz, Low Noise P+-GaInAs/N-AlInAs/GaInAs JHEMT Technology

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Abstract

It is becoming increasingly critical to successfully develop a compound semiconductor IC technology which is both high performance and low cost to penetrate crucial large volume markets such as future nun-wave wireless communications. This requires a simple transistor technology which (i) exhibits high performance across a wide bias range to perform both transmit and receive operations, (ii) has high threshold uniformity to enable high density, high speed signal processing circuits, and (iii) has a basic technology which is relatively transparent to the two commercially important family of materials, namely, GaAs and InP based. The Junction HEMT (JHEMT) technology which is presented satisfies the above criteria.

© 1995 Optical Society of America

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