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Conferences > UEO > 1997 > UC > UC12

20 GHz High Performance Planar Si/InGaAs P-i-n Photodetector

B. F. Levine, A. R. Hawkins, S. Hiu, B. J. Tseng, C. A. King, L. A. Gruezke, R. W. Johnson, D. R. Zolnowski, and J.E. Bowers

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Abstract

Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated. They show high internal quantum efficiency, high speed, record low dark current, and no evidence of charge trapping, recombination centers or a bandgap discontinuity at the heterointerface.

© 1997 Optical Society of America

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