Abstract
A new ultrafast photodiode, uni-traveling-carrier photodiode (UTC-PD) is proposed, and its photoresponse characterization on fabricated devices is presented. The prime feature of this PD is much higher output saturation current than that in a conventional pin-PD. This is achieved by reducing the space charge effect by utilizing electron velocity overshoot in the carrier collecting layer. A 20 μm2-area UTC-PD fabricated with MOVPE-grown InP/InGaAs heterostructure generated an output voltage as high as 2 V for a 25 Ω load while maintaining an f3dB of 80 GHz. Proper device operations at high photocurrent densities up to 400 kA/cm2 were observed.
© 1997 Optical Society of America
PDF ArticleMore Like This
Tadao Ishibashi and Naofumi Shimizu
UFA3 Ultrafast Electronics and Optoelectronics (UEO) 1999
S. Kodama
ThB1 Ultrafast Electronics and Optoelectronics (UEO) 2003
Huapu Pan, Yang Fu, Zhi Li, and Joe C. Campbell
OWN1 Optical Fiber Communication Conference (OFC) 2010