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Ultrafast Photoconductive Switches with a Gap of 43 nm Fabricated by an Atomic Force Microscope

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Abstract

Photoconductive switches with a gap of 43 nm have been fabricated by using an atomic force microscope. Ultrafast response of the switches have been measured by electrooptic sampling method. Intrinsic response of the switch has been estimated as 210 fs by extrapolation of impulse response at zero distance.

© 1997 Optical Society of America

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