Abstract
Polycrystalline silicon films, deposited on fused silica substrates, have been implemented as fast-response-time photoconductive switches. The switches were illuminated with 800-nm, 100-fs optical pulses from a Ti:sapphire mode-locked laser, and the photoresponse was observed using both a 34-GHz sampling oscilloscope and a subpicosecond electro-optic (EO) sampling system. We observed a 3-ps transient with the EO sampler, which is the fastest signal ever reported for this type of material. The switch also responded to 1.55-µm femtosecond laser pulses with transient signals as short at 36 ps, limited by the switch geometry.
© 1997 Optical Society of America
PDF ArticleMore Like This
Mikael Lindgren, Wen-Sheng Zeng, Marc Currie, Carlo Williams, Thomas Y. Hsiang, Philippe M. Fauchet, Roman Sobolewski, Steven H. Moffat, Robert A. Hughes, John S. Preston, and Frank A. Hegmann
CTuC8 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997
Song Huang, Jinze Cao, Jiaxin Cao, Qiang Wu, Weiqing Gao, and Jingjun Xu
ATu4C.7 CLEO: Applications and Technology (CLEO:A&T) 2022
A. M. Johnson, D. W. Kisker, and W. M. Simpson
FB3 Picosecond Electronics and Optoelectronics (UEO) 1985