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Conferences > UEO > 1999 > UThC > UThC4

Ultra high frequency HBT integrated circuits

Q. Lee, D. Mensa, J. Guthrie, M. Rodwell, S. Long, S. C. Martin, R. P. Smith, Y. Betser, S. Jaganathan, T. Mathew, P. Krishnan, and C. Serhan

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Abstract

Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicron emitter- base and collector-base junctions, minimizing RC parasitics and increasing fmax to 500 GHz. The process also provides a microstrip wiring environment on a low- ϵr dielectric substrate. Demonstrated small-scale ICs in the process include lumped and distributedamplifiers with bandwidths to 85 GHz, 48 GHz static frequency dividers, and 50GHz AGC / limiting amplifiers.

© 1999 Optical Society of America

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