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This paper presents a novel ultrahigh-speed optical gate monolithically integrating a uni-traveling-carrier photodiode (UTC-PD) and an electroabsorption modulator (EAM) with a traveling-wave design in which the PD directly drives the EAM. A good extinction ratio of 18 dB was obtained with a gate opening time (FWHM) of 2.7 ps. Using the nonlinear extinction characteristics of the EAM, FWHM could be further reduced to be as short as 2.3 ps.
© 2001 Optical Society of America
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