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Conferences > UEO > 2001 > UFA > UFA4

High-Speed Transparent Indium-Tin-Oxide Based Resonant Cavity Schottky Photodiode with Si3N4/SiO2 Top Bragg Mirror

Necmi Biyikli, Ibrahim Kimukin, Ekmel Ozbay, Mutlu Gokkavas, and Selim Unlu

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Abstract

High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semi-transparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high- efficiency AlGaAs/Ga As-based Schottky photodiodes using transparent indiumtin-oxide (ITO) Schottky contact material and resonant cavity enhanced (RCE) detector structure. Using a Si3N4/SiO2 top Bragg mirror, we achieved a peak efficiency of 75% at 815 nm along with a 3-dB bandwidth of 60 GHz.

© 2001 Optical Society of America

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