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Monolithic Digital Optoelectronic ICs towards 100 Gbit/s

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Abstract

We describe monolithic digital optoelectronic ICs by using resonant-tunneling- diodes (RTDs) or high-electron-mobility transistors (HEMTs) and uni-traveling-carrier photodiodes (UTC-PDs). By using monolithic integration of RTDs and UTC-PDs, 80Gbit/s demultiplexer, 80-Gbit/s delayed flip-flop, and 46.2-Gbit/s clock recovery circuits were demonstrated. Also, by integrating HEMTs and UTC-PDs, a 40-Gbit/s error-free operation of optoelectronic decision circuit was obtained on the package level.

© 2001 Optical Society of America

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