Abstract

Pulsed laser-induced phase transitions in semiconductors are characterized by an ultrafast energy transfer from the generated electron-hole plasma to the phonons. Time-resolved optical measurements provide ample evidence that the thermal equilibrium between carriers and phonons is established within a few picoseconds [1]. However, optical techniques mainly explore the evolution of plasma density and lattice temperature. Direct information about the energy content of the electron-hole plasma and the energy loss due to phonon interaction cannot be obtained. Picosecond photoemission provides a direct approach to this problem.

© 1984 Optical Society of America