Abstract

The study of transient electron transport has fundamental importance for the understanding of high-speed semiconductor devices. Despite the large volume of research on hot carrier relaxation in semiconductors, very few experimental investigations have been conducted on transport issues under the condition of high electric field. We have attempted a fairly comprehensive experimental investigation of high-field electron dynamics on fs and ps time scales corresponding to the transient regimes of ballistic, overshoot, and quasi-equilibrium transport [1].

© 1992 The Author(s)