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Radiative Recombination of Free Excitons in GaAs Quantum Wells

B. Sermage, K. Satzke, C. Dumas, N. Roy, B. Deveaud, F. Clérot, and D. S. Katzer

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Abstract

We have studied the free excitons life time in GaAs-AlAs quantum wells as a function of excitation wavelength around the resonnance. The samples were 4.8 nm thick MBE grown GaAs quantum wells between two 4.2 nm thick AlAs barriers with growth interruption at the inter faces. They showed nice monolayer splittings in low temperature luminescence1. The exciton lifetime was measured by time resolved luminescence after short pulse excitation. The laser was a synchronously pumped mode locked dye laser and the detection was obtained by a synchroscan streak camera. The decay time resolution was about 7 ps.

© 1992 The Author(s)

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