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Carrier transport in 1.5 μm quantum well laser structures

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Abstract

Carrier transport time is one of the main factors limiting the high-speed performance of the quantum well lasers [1]. Thus, investigations of the transport mechanisms are essential for the improvement of the laser characteristics. In this paper we examine the carrier transport in the 1.5 μm InGaAs/InP graded-index separate-confinement hetero structure (GRINSCH) laser by means of time-resolved photoluminescence (PL). Such measurements produce a direct picture of the carrier motion and allow to draw conclusions about the transport mechanisms.

© 1994 Optical Society of America

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