Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

THz Radiation from delta-doped GaAs

Not Accessible

Your library or personal account may give you access

Abstract

The emission of ultrafast THz pulses after femtosecond laser pumping was recently introduced by Zhang and Auston [1] as a sensitive probe of the semiconductor surface region. Photoexcited carriers created near the surface are accelerated by the electric field present due to band-bending. The resulting photo current radiates an electro-magnetic pulse posessing frequency components in the THz-regime. The detailed structure of the THz pulse carries information about the built-in surface fields in the sample.

© 1994 Optical Society of America

PDF Article
More Like This
THz radiation from delta-doped GaAs

D. Birkedal and S. R. Keiding
QWB6 European Quantum Electronics Conference (EQEC) 1994

Optical Enhancement of THz Emission from Bulk GaAs

B. B. Hu, P. C. M. Planken, M. C. Nuss, K. W. Goossen, and J. E. Cunningham
ThD.5 International Conference on Ultrafast Phenomena (UP) 1994

THz radiation patterns from semiconductor dipole antennas

P. Uhd Jepsen and S. R. Keiding
QThG13 European Quantum Electronics Conference (EQEC) 1994

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.