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Conferences > UP > 1996 > ThB > ThB.3

Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs quantum dots

J.H.H. Sandmann, S. Grosse, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto

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Abstract

We present results of time-resolved photoluminescence (PL) studies performed on InGaAs quantum dots (QD) of remarkably high optical quality. Characteristic QD properties in the relaxation and recombination scenario such as delay of relaxation by Pauli-blocking, inefficient inter-dot-state relaxation by phonon scattering and a temperature independent recombination lifetime are observed. In addition, we find that fast and efficient Coulomb-scattering speeds up the carrier relaxation between QD states, i.e. down to the lowest QD ground state.

© 1996 Optical Society of America

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