Abstract

In intrinsic semiconductors, the ultrafast intraband relaxation of nonequilibrium carriers is governed by two important processes: carrier-carrier (cc) and carrier-phonon (cp) scattering. Valuable information on these basic interactions is extracted from experiments if the different contributions to the kinetics can be clearly separated. However, time and energy resolved data under conditions where cp scattering is the dominating effect for the first relaxation steps, are difficult to obtain because of the limited sensitivity of ultrafast measurements at low carrier concentrations.

© 1996 Optical Society of America