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Femtosecond optical time-of-flight measurement of the electron velocity in GaN

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Abstract

A femtosecond optically-detected time-of-flight technique has been used to determine the electron transit time and steady-state velocity-field characteristic in a GaN p-i-n diode. The peak electron velocity of 1.9×107 cm/sec is attained at 225 kV/cm.

© 2000 Optical Society of America

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