Abstract
The degree of order in a semiconductor lattice plays a fundamental role in determining the electronic properties of the material. In this work, we have investigated the fast carrier and lattice dynamics in silicon-based semiconductor materials in which the degree of structural order has been systematically varied. The high time resolution of our measurements has allowed us to definitively establish the time scale for the fundamental carrier thermalization process in amorphous silicon, and comparison of the nature of the response in the amorphous and crystalline phases indicates that the degree of order has a dramatic impact on the associated lattice relaxation processes. The results provide a basis for understanding the fast carrier processes in heterogeneous nanocrystalline materials.
© 2002 Optical Society of America
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