Evaluation of complex optical constants of semiconductor wafers using terahertz ellipsometry

Takeshi Nagashima; Masanori Hangyo

14th International Conference on Ultrafast Phenomena
Technical Digest (CD) (Optica Publishing Group, 2004),
paper ME35

Evaluation of complex optical constants of semiconductor wafers using terahertz ellipsometry

Takeshi Nagashima and Masanori Hangyo

International Conference on Ultrafast Phenomena 2004

Niigata Japan
25–30 July 2004
ISBN: 3-54024-110-8

From the session
Poster Session I (Exhibition) (ME)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
T. Nagashima and M. Hangyo, "Evaluation of complex optical constants of semiconductor wafers using terahertz ellipsometry," in 14th International Conference on Ultrafast Phenomena, Technical Digest (CD) (Optica Publishing Group, 2004), paper ME35.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

We have developed terahertz ellipsometry by combining ellipsometry with time domain spectroscopy in the terahertz frequency region. Complex optical constants of Si wafers with various carrier concentration were measured by the terahertz ellipsometry.

PDF Article

More Like This

Evaluation of complex optical constants of semiconductor wafers using terahertz ellipsometry

Takeshi Nagashima and Masanori Hangyo
CThM12 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003

Measurement of Optically Dense Semiconductor with 1020 cm-3 Carrier Density by Terahertz Time-Domain Ellipsometry

Verdad C. Agulto, Toshiyuki Iwamoto, Hideaki Kitahara, Kazuhiro Toya, Valynn Katrine Mag-usara, Masayuki Imanishi, Yusuke Mori, Masashi Yoshimura, and Makoto Nakajima
12p_N405_4 JSAP-OSA Joint Symposia (JSAP) 2021

THz time-domain magneto-optical ellipsometry in reflection geometry

Y. Ino, R. Shimano, M. Kuwata-Gonokami, and Yu. P. Svirko
IWA1 International Quantum Electronics Conference (IQEC) 2004

Previous Article Next Article