Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Ultrafast Carrier Dynamics in Individual GaN/InGaN Multiple Quantum Well Nanowires

Not Accessible

Your library or personal account may give you access

Abstract

Individual nanowires consisting of a GaN core and a shell of multiple InGaN quantum wells were studied using ultrafast pump-probe spectroscopy to determine the mechanisms and relaxation pathways through which excited carriers recombine.

© 2016 Optical Society of America

PDF Article
More Like This
Thermionic emission dominated carrier dynamics in InGaN/GaN multiple-quantum-wells

Chi-Kuang Sun, Jian-Chin Liang, Xiang-Yang Yu, Amber Abare, and Steven P. DenBaars
QFD6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2000

Picosecond Carrier Transport and Capture for InGaN/GaN Single and Multiple Quantum Wells

S. B. Fleischer, S. Keller, A. C. Abare, L. A. Coldren, U. K. Mishra, S. P. DenBaars, and J. E. Bowers
UFB5 Ultrafast Electronics and Optoelectronics (UEO) 1999

Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells

Saulius Marcinkevičius, Rintat Yapparov, Leah Y. Kuritzky, Shuji Nakamura, and James S. Speck
JW2A.27 Advanced Solid State Lasers (ASSL) 2019

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.