Abstract
The applicability of layers of ion-implanted polymethyl methacrylate (PMMA) for beam splitting of laser light at the telecommunications wavelength of is examined. Bulk PMMA is studied, subjected to low-energy () silicon ion implantation at various ion fluences in the range from to . The formed ultrathin near-surface ion-implanted layer of a thickness of about , buried in a depth of , can be used to split (or combine) laser beams at with a low absorption loss.
© 2010 Optical Society of America
Full Article | PDF ArticleMore Like This
Sha-Sha Guo, Tao Liu, Jin-Hua Zhao, Jing Guan, and Xue-Lin Wang
Appl. Opt. 49(31) 6039-6042 (2010)
H. Rigneault, F. Flory, S. Monneret, S. Robert, and L. Roux
Appl. Opt. 35(25) 5005-5012 (1996)
Shao-Mei Zhang, Ke-Ming Wang, Xiangzhi Liu, Zhuanfang Bi, and Xiu-Hong Liu
Opt. Express 18(15) 15609-15617 (2010)