Abstract
The HgCdTe layers ( and 0.225) were grown by molecular beam epitaxy and liquid phase epitaxy, respectively, followed by the deposition of CdTe and ZnS films as barrier layers by thermal evaporation. Then, the p-on-n photodiodes were fabricated by AS ion implantation, Hg overpressure annealing, passivation, and metallization. The secondary ion mass spectrometry and transmission electron microscopy results indicate that the evaporated CdTe layer with a column structure induces the channeling effect of As ion implantation causing the device performance degradation. This effect could be suppressed by depositing a CdTe film with a layered structure through E-beam evaporation. Finally, the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of these p–n junctions were estimated and analyzed.
© 2016 Optical Society of America
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