Abstract

In this paper, an approach is proposed for an ultra-broadband quantum dot (QD) reflective semiconductor optical amplifier using superimposed QDs with switching and band selection capability in the supported band. Furthermore, about 1 µm optical bandwidth is covered (O, E, S, C, and L bands), which is the desired region in most optical communication applications. Three optical windows are selected for optimized amplification (1.55 µm, 1.5 µm, 1.31 µm). Also, they can be amplified either simultaneously or one at a time, which guarantees independent modulation. This is a remarkable property in fast data transmission. The amplifier is devised by solution process nanotechnology, which guarantees its synthesizing feasibility with low cost. Finally, by introducing this amplifier, one step is taken toward the development of fast wavelength division multiplexing passive optical networks.

© 2022 Optica Publishing Group

Theoretical investigations of quantum-dot semiconductor optical amplifier enabled intensity modulation of adaptively modulated optical OFDM signals in IMDD PON systems

A. Hamié, M. Hamze, J. L. Wei, A. Sharaiha, and J. M. Tang
Opt. Express 19(25) 25696-25711 (2011)

Numerical characterization of InP-based quantum dot semiconductor optical amplifier

Omnia M. Nawwar, Ahmed Emara, Moustafa H. Aly, and Ali M. Okaz
Appl. Opt. 55(35) 9978-9985 (2016)

Operation of quantum-dot semiconductor optical amplifiers under nonuniform current injection

Hussein Taleb, Kambiz Abedi, and Saeed Golmohammadi
Appl. Opt. 50(5) 608-617 (2011)

Quantum dot semiconductor optical amplifier: role of second excited state on ultrahigh bit-rate signal processing

Seyed Mohsen Izadyar, Mohammad Razaghi, and Abdollah Hassanzadeh
Appl. Opt. 56(12) 3599-3607 (2017)

Four-wave mixing in quantum dot semiconductor optical amplifiers

Ahmed H. Flayyih and Amin H. Al-Khursan
Appl. Opt. 52(14) 3156-3165 (2013)