Abstract

Numerous applications have been suggested for terahertz frequencies including medical imaging of skin cancer [Ref. 1], dental imaging [Ref. 2], telecommunications, security scanning, gas sensing, astronomy, molecular spectroscopy and the possible detection of biological agents [Ref. 3]. While p-Ge lasers do provide a THz source, they are impractical in most situations, as they require both liquid helium cryogenic temperatures and crossed electric and magnetic fields (Ref. 4]. Population inversion and THz emission has also been demonstrated in optically pumped phosphorous doped silicon [Ref. 5]. In this paper THz emission is demonstrated from electrically pumped boron doped Si/SiGe heterostructures.

© 2002 Optical Society of America