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  • 2017 European Conference on Lasers and Electro-Optics and European Quantum Electronics Conference
  • (Optica Publishing Group, 2017),
  • paper CE_6_5

Laser annealed low temperature deposited polysilicon waveguides for nonlinear photonics

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The intrinsic properties of silicon (Si) make it an excellent material for integrated photonics devices with small footprints [1]. To date, most of the reported devices have been based on crystalline silicon (c-Si), but this material suffers from difficult integration with electronic layers due to fabrication constraints. Subsequently, there has been growing interest in alternative forms of Si, such as hydrogenated amorphous silicon (a-Si:H), silicon nitride (SiN) and polysilicon (poly-Si) [2]. Among these materials, only poly-Si has the potential to exhibit both optical and electronic properties that are equivalent to c-Si. However, to achieve good material quality, poly-Si is typically deposited at temperatures higher than 900°C, rendering it incompatible with most CMOS fabrication processes. Thus there is a growing drive to develop new techniques to deposit poly-Si at low temperatures (<450°C) [2], but so far the optical losses in these materials have been high, limiting its use in all-optical systems employing nonlinear optical processing. In this work, we report the fabrication and characterisation of laser annealed, low temperature deposited silicon waveguides with low optical losses. Our results represent the first demonstration of nonlinear propagation in a poly-Si waveguide suitable for integration.

© 2017 IEEE

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