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  • 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper jsiii_1_2

Rapid hot carrier relaxation and mobility increase in Sn- and Pb-containing halide perovskite semiconductors

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The remarkable optoelectronic performance of metal halide perovskites has instigated fundamental research into their photophysics and photochemistry, including the fundamentals of light absorption and emission, and electrical transport. Recent studies have revealed unexpected hot carrier phenomena in metal halide perovskites, whereby at energies high above the band gap, and at high excitation intensities, long-lived hot carriers have been observed1 which can undergo long-range transport.2 This has opened the possibility of harvesting and exploiting hot carriers in semiconductor devices, for instance to overcome the Schockley-Queisser limit in photovoltaic cells.

© 2019 IEEE

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