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Laser-Induced Focusing for Silicon nanoscopy

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Abstract

We demonstrate the shaping and focusing of a probe IR (λ=1.55μm) laser beam in silicon. The shaping was done by a second pump laser beam at λ=0.775μm and 30ps pulse width which simultaneously and collinearly, illuminates the silicon surface with the IR beam. The shaped probe beam will be used in silicon nanoscopy.

© 2020 The Author(s)

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