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Improved fabrication of scalable hybrid silicon nitride–thin-film lithium niobate electro-optic modulators

Abstract

Strategies for improved fabrication of integrated thin-film lithium niobate electro-optic (EO) Mach–Zehnder modulators (MZMs) are reported using scalable processes and designs. The MZM devices utilize direct bonding of unetched and unpatterned thin-film lithium niobate to patterned and planarized silicon photonic microchips. The latter contains silicon nitride waveguide structures of various widths that are used to form hybrid modes that are suitable for high-bandwidth low-voltage EO modulators based on Pockels effect. We report that the incorporation of appropriately designed outgassing channels and certain modifications to key processing steps helped achieve a greater than 99% reduction in void density during bonding. Void reduction is critically important for these traveling-wave hybrid MZM devices in which the optical mode is controllably distributed between multiple thin layers and propagates over millimeter-scale lengths.

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Supplementary Material (1)

NameDescription
Supplement 1       Supplementary document which includes additional figures showing three additional samples of bonded SiN-LN without IPOCs.

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the corresponding author upon reasonable request.

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