Toward photonic–electronic convergence based on heterogeneous platform of merging lithium niobate into silicon

Jing Wang; Haoru Yang; Nina Xiong; Muyan Zhang; Na Qian; Sicheng Yi; Shaofu Xu; Weiwen Zou

doi:10.1364/JOSAB.484460

Journal of the Optical Society of America B
Vol. 40,
Issue 6,
pp. 1573-1590
(2023)
•https://doi.org/10.1364/JOSAB.484460

Toward photonic–electronic convergence based on heterogeneous platform of merging lithium niobate into silicon

Jing Wang, Haoru Yang, Nina Xiong, Muyan Zhang, Na Qian, Sicheng Yi, Shaofu Xu, and Weiwen Zou

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Jing Wang, Haoru Yang, Nina Xiong, Muyan Zhang, Na Qian, Sicheng Yi, Shaofu Xu, and Weiwen Zou, "Toward photonic–electronic convergence based on heterogeneous platform of merging lithium niobate into silicon," J. Opt. Soc. Am. B 40, 1573-1590 (2023)

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- Photonics
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About this Article
History
- Original Manuscript: January 3, 2023
- Revised Manuscript: March 22, 2023
- Manuscript Accepted: March 30, 2023
- Published: May 23, 2023
Virtual Issues
JOSA B Feature Issue: Integrated Lithium Niobate Photonics (2023)

Abstract

The rapid development of fabrication techniques has boosted the resurgence of integrated photonics based on lithium niobate (LN). While thin-film LN is available and has been a promising photonic platform owing to its superior material properties, it is held back by its non-compatibility with complementary metal-oxide-semiconductor (CMOS) processes and the lack of high-density scaling possibilities. Silicon (Si), despite its less favorable intrinsic properties, was the dominant platform for photonic devices with compact footprints, high density, low cost, and high volume. By embedding thin-film LN into the Si platform, heterogeneous Si/LN photonic devices can be integrated on the same chip, simultaneously leveraging the advantages of the two different materials. In parallel with the development of photonic devices, research in photonic–electronic integrated circuits (PEICs) has flourished. This review begins with the material properties of LN and fabrication approaches for heterogeneous integration. We then introduce various photonic devices involving different functionalities. After that, the advances in photonic–electronic convergence are presented. Taking inspiration from PEICs using Si, we envision the contribution of thin-film LN conjunct with Si in the future PEICs. Finally, some conclusions and challenges are discussed.

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Parameter	Si	$S i_{3} N_{4}$	LNOI	InP
Refractive index (at 1550 nm)	$\sim 3.48$ [26]	$\sim 1.98$ [27]	$n_{e} \sim 2.14$ , $n_{o} \sim 2.21$ [21]	3.17 [28]
CTE (300 K, $1 0^{- 6} / K$ )	2.6 [25]	3.27 [29]	14.4 (X-cut)7.5 (Z-cut) [30]	4.56 [28]
Loss of waveguides^b (dB/cm at 1550 nm)	0.5 [31]	0.0013 [32]	0.027 [33]	0.81 [34]
Breakdown voltage (kV/cm)	200 [35]	3000 [37]	220 [37]	10 [38]
Modulation mechanism	Carrier dispersion	/	Pockels effect	Multiple effects
EO coefficients (pm/V)	/	/	Up to 30.8 [23]	1–2 [1]
TO coefficient ( $K^{- 1}$ )	$1.8 \times 1 0^{- 4}$ [40]	$2.45 \times 1 0^{- 5}$ [27]	$3.34 \times 1 0^{- 5}$ ( ${dn}_{e} / dT$ )0 ( ${dn}_{o} / dT$ )^c [40]	$2.01 \times 1 0^{- 4}$ [28]

Type	Platform	Electrodes	$V π L$ ( $V \times c m$ )	$V π ($ V)	L (mm)	BW (GHz)	ER (dB)	Loss (dB/cm)	Ref.
MZM	etched LNOI	CPW-TWEs	2.2	4.4	5	100	30	0.3	[69]
MZM	etched LNOI	CPW-TWEs	2.2	4.4	5	84	23	$< 0.02$	[70]
MZM	etched LNOI	CPW-TWEs	1.75	3.5	5	$> 40$	17	0.2	[71]
MZM	etched LNOI	CPW-TWEs	2.37	4.74	5	$> 110$	$> 23$	0.2	[72]
MZM	etched LNOI	CL-TWEs	1.2	1.2	10	300	/	$< 1$	[73]
FMZM	etched LNOI	CL-TWEs	2.2	1.08	21	43	15	0.05	[74]
DP-MZM	etched LNOI	CL-TWEs	6.2	3.1	20	$> 50$	24	/	[75]
DPIQ-MZM	etched LNOI	CL-TWEs	2.35	1	23.5	$> 110$	$> 20$	/	[76]
FMZM	etched LNOI	CPWs	2.74	2.74	10	55	/	/	[77]
IQ-MZM	etched LNOI	CPWs	2.4	1.9	13	48	$> 25$	0.15	[24]
DPIQ- MZM	etched LNOI	CPWs	2.6	2.18	12	30	24	/	[78]
MZM	LN/SiNOI	CPWs	6.7	13.4	5	30.6	$> 20$	/	[61]
MZM	LN/SOI	CPWs	6.7	13.4	5	$> 106$	30	0.6	[79]
MZM	LN/SOI	CPWs	3.7	7.4	5	$> 110$	/	0.6	[80]
MZM	LN/SOI	SWEs	3.1	6.2	5	110	28	0.6	[81]
MZM	LN/SOI	CL-TWEs	2.13	1.7	12.5	$> 70$	25	/	[82]
DPIQ-MZM	LN/SOI	CL-TWEs	2.28	3	7.5	67	/	/	[83]
MZM	a-Si/LNOI	CPWs	1.9	3.2	6	60	17.9	/	[49]
MZM	SiN/LNOI	CPWs	2.11	0.875	24	NA	30	0.12	[50]
FMZM	SiN/LNOI	CPWs	3.3	3	11	30	45	0.08	[51]
FMZM	SiN/LNOI	CPWs	4	4	10	37.5	23	0.66	[52]
MZM	SiN/LNOI	SWEs	3.75	3.75	10	95	45	/	[53]
MZM	SiN/LNOI	CPWs	3.12	1.3	24	29	27	0.28	[54]
MZM	Si/I/LNOI	CPWs	2.5	3	8.5	180	/	0.24	[84]

Type	Structure	Er Density (mol%)	Laser Wavelength (nm)	Pump Wavelength (nm)	$P_{th}$ (mW)	$P_{max}$ (nW)	Ref.
Multi-mode	Microring	0.1	1532	970	0.02	$\sim 0.07$	[94]
emission	Microdisk	1	1563	976	0.4	140	[95]
Single-mode	coupled microdisks	1	1550.5	977	0.2	50	[96]
emission	coupled resonators^a	1	$\sim 1560.6$	974	1.31	95	[97]
	coupled microrings	1	1531	1484	13.5	320	[98]
	Microrings	1	1531	1484	14.5	2200	[99]
	Microdisks	1	1531	976	24.5	$\sim 100$	[100]

Integration Approach	Wavelength Range (nm)	$I_{th}$ (mA)	$P_{max}$ (mW)	Ref.
Hybrid integration	NA	60	60	[107]
Hybrid integration	1304.5–1340.9	100	2.5	[108]
Hybrid integration	1576–1596	80	3.7	[105]
Transfer printing	1534–1555	85	0.77	[109]
Heterogeneous bonding	NA	80	1.3	[106]

Material	Structure	CE (dB)	Bandwidth (nm)	Ref.
LNOI	Uniform GC	−3.5	NA	[143]
LNOI	Uniform GC	−5.4	80 (3 dB)	[144]
LNOI	Uniform GC	−6.3	90 (3 dB)	[145]
LNOI	Chirped GC	−3.6	NA	[147]
${L N O I}^{M}$	Chirped GC	$- 0 . 8^{s} / - 5.5$	90 (3 dB)	[149]
${L N O I}^{M}$	Chirped GC	−0.46	38 (3 dB)	[150]
${L N O I}^{M}$	Cavity-assisted GC	$- 0.8 9^{s}$	45 (1 dB)	[124]
Si/LNOI	Uniform GC	$- 5^{s} / - 18$	NA	[152]
Si/LNOI	Uniform GC	$- 2 . 7^{s} / - 3.06$	55 (1 dB), 102 (3 dB)	[126]
Si/LNOI	Apodized GC	$- 0.6 6^{s}$	NA	[153]
Si/LNOI	Uniform GC	$- 1 . 5^{s}$	38 (1 dB), 68 (3 dB)	[154]
SRN/LNOI	Uniform GC	−5.82	57 (3 dB)	[156]
SiN/LNOI	Uniform GC	−4.02 at 1609	70 (3 dB)	[157]
Au/LNOI	Uniform GC	$- 3 . 0^{s} / - 3.6$	58 (1 dB)	[159]
Au/LNOI	Uniform GC	−3.56	45 (0.5 dB)	[160]
LNOI	Edge coupler	$- 1.32$	NA	[161]
LNOI	Edge coupler	$- 0.54$	NA	[127]
LNOI	Edge coupler	$- 0.5$	NA	[162]
LNOI	Edge coupler	$- 0.1 1^{s}$	NA	[128]

Abstract

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Journal of the Optical Society of America B