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Direct Bonding of GaAsSb to Silicon for High-Speed Avalanche Photodiodes

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Abstract

High-speed communications require photonic devices handling data rates greater than 200 Gbps. We present GaAsSb/Si heterojunction devices via direct bonding of GaAsSb to Si as a method to develop avalanche photodiodes for enhanced chip-to-chip connectivity.

© 2023 The Author(s)

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