Abstract
We show that sensitized superbroadband near-IR (NIR) emission in bismuth glass/Si nanocrystal superlattices can be realized. Photoluminescence is enhanced by 1 order of magnitude in this structure. We observed that the excitation wavelength dependence of the NIR emission does not show any distinct structure corresponding to the direct transition of bismuth IR-active centers. Our results suggest that the enhanced emission might result from the energy transfer from Si nanocrystals to IR-active bismuth. This structure may find broad applications for broadband amplifiers and broadly tunable laser sources.
© 2010 Optical Society of America
Full Article | PDF ArticleMore Like This
Bo Zhou and Edwin Yue-Bun Pun
Opt. Lett. 36(15) 2958-2960 (2011)
Hong-Tao Sun, Minoru Fujii, Yoshio Sakka, Zhenhua Bai, Naoto Shirahata, Liyan Zhang, Yuji Miwa, and Hong Gao
Opt. Lett. 35(11) 1743-1745 (2010)
Yuji Miwa, Hong-Tao Sun, Kenji Imakita, Minoru Fujii, Yu Teng, Jianrong Qiu, Yoshio Sakka, and Shinji Hayashi
Opt. Lett. 36(21) 4221-4223 (2011)