Abstract

Wideband, low power electrooptic modulators of optical waveguide structure have been developed for infrared laser applications. They allow a reduction in driver power of two orders of magnitude below that of conventional devices. The modulators are composed of very thin layers of single-crystal GaAs, bounded on both sides by evaporated films of lower refractive index material: CdTe or As₂S₃. Minimum propagation loss, measured at 10.6 μm, was less than 1 dB/cm for TE modes and less than 5 dB/cm for TM modes. A 20-pF modulator exhibited a pulse response rise time of 3 nsec and showed useful frequency response to beyond 200 MHz. The basic capability for advanced design modulators of this type to operate at 10 μm with driver powers of less than 25 mW/MHz for 50% modulation depth is shown.

© 1974 Optical Society of America

Integrated Electrooptic Laser Deflector

J. T. Boyd
Appl. Opt. 13(5) 1041-1044 (1974)

Nonoxide Chalcogenide Glass Films for Integrated Optics

R. K. Watts, M. de Wit, and W. C. Holton
Appl. Opt. 13(10) 2329-2332 (1974)

Optical Waveguide Structures for CO₂ Lasers

P. K. Cheo, J. M. Berak, W. Oshinsky, and J. L. Swindal
Appl. Opt. 12(3) 500-509 (1973)

Thin-Film Laser-to-Fiber Coupler

L. P. Boivin
Appl. Opt. 13(2) 391-395 (1974)

PLZT thin-film waveguides

Takao Kawaguchi, Hideaki Adachi, Kentaro Setsune, Osamu Yamazaki, and Kiyotaka Wasa
Appl. Opt. 23(13) 2187-2191 (1984)