Abstract

A random access optical memory for write-read-write operation is proposed. The memory is designed on the basis of a nonvolatile magnetooptic photoconductor sandwich storage material (mops) that offers high optical sensitivity. The optical addressing part of the memory consists of an He–Ne laser, digital light deflection combined with passive beam splitting and simple optics. The addressing is organized in blocks of about 10³ bits. First experimental results measured at a system model being developed in our laboratory are presented, as well as results of storage experiments at a magnetooptic photoconductor sandwich.

© 1975 Optical Society of America

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