Abstract

A drastic increase of transmission was observed in tellurium at wavelengths near 11 μm for a polarization E||C, if an acoustoelectric domain is present. This behavior is opposite to the observations made with other semiconductors. It is assumed that the absorption, which is caused by an intervalence band transition, decreases due to carrier heating and increased damping in the field of the acoustoelectric domains. Other effects, such as the Franz-Keldysh-type optical transitions, seem to be of much less importance. From comparison of the experimental results with numerical data of the p-band absorption a carrier temperature of 2000 K and damping of 81 meV are estimated.

© 1977 Optical Society of America

Residual absorption in infrared materials

Marvin Hass and Bernard Bendow
Appl. Opt. 16(11) 2882-2890 (1977)

Refractive index of GaSe between 0.45 μm and 330 μm

N. Piccioli, R. Le Toullec, M. Mejatty, and M. Balkanski
Appl. Opt. 16(5) 1236-1238 (1977)

Temperature sounding from the absorption spectrum of CO₂ at 4.3 μm

Robert A. Toth
Appl. Opt. 16(10) 2661-2668 (1977)

Line shape cyclotron resonance in n -type germanium at 337 μm in the temperature range 15–80 K

F. Kuchar
J. Opt. Soc. Am. 67(7) 935-938 (1977)

Far infrared recombination radiation from n-type Hg₁₋xCdxTe

E. Tyssen and G. Nimtz
Appl. Opt. 16(11) 2957-2960 (1977)