Abstract

The resonant FTR technique for the characterization of thin films is presented. In this technique the film under study is incorporated in an appropriate optical cavity configuration, and information on its parameters is obtained from the values of wavelength and/or incidence angle for which resonances occur in the optical response of the structure. After a review of the basic principles and a discussion of the practical implementation of the technique, we report as examples some results of its application to the study of SiO₂ films and Si epitaxial layers grown on a Si substrate.

© 1982 Optical Society of America

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