Abstract

A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is $4\times {10}^{-16}\text{W}/\sqrt{\text{Hz}}$ at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 cm² and a time constant of 20 msec at a bath temperature of 0.35 K.

© 1984 Optical Society of America

Characterization of a submillimeter high-angular-resolution camera with a monolithic silicon bolometer array for the Caltech Submillimeter Observatory

Ning Wang, T. R. Hunter, D. J. Benford, E. Serabyn, D. C. Lis, T. G. Phillips, S. H. Moseley, K. Boyce, A. Szymkowiak, C. Allen, B. Mott, and J. Gygax
Appl. Opt. 35(34) 6629-6640 (1996)

Silicon nitride micromesh bolometer array for submillimeter astrophysics

Anthony D. Turner, James J. Bock, Jeffrey W. Beeman, Jason Glenn, Peter C. Hargrave, Viktor V. Hristov, Hien T. Nguyen, Faiz Rahman, Srinivasan Sethuraman, and Adam L. Woodcraft
Appl. Opt. 40(28) 4921-4932 (2001)

Composite infrared bolometers with Si₃N₄ micromesh absorbers

P. D. Mauskopf, J. J. Bock, H. Del Castillo, W. L. Holzapfel, and A. E. Lange
Appl. Opt. 36(4) 765-771 (1997)

Electrothermal model for ideal semiconductor bolometers

G. Chanin and J. P. Torre
J. Opt. Soc. Am. A 1(4) 412-419 (1984)

Voltage-biased superconducting transition-edge bolometer with strong electrothermal feedback operated at 370 mK

Shih-Fu Lee, Jan M. Gildemeister, Warren Holmes, Adrian T. Lee, and Paul L. Richards
Appl. Opt. 37(16) 3391-3397 (1998)