Charge-injection-device 2 × 64 element infrared array performance

Mark E. McKelvey; Craig R. McCreight; John H. Goebel; A. Arlo Reeves

doi:10.1364/AO.24.002549

Applied Optics
Vol. 24,
Issue 16,
pp. 2549-2557
(1985)
•https://doi.org/10.1364/AO.24.002549

Charge-injection-device 2 × 64 element infrared array performance

Mark E. McKelvey, Craig R. McCreight, John H. Goebel, and A. Arlo Reeves

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Mark E. McKelvey, Craig R. McCreight, John H. Goebel, and A. Arlo Reeves, "Charge-injection-device 2 × 64 element infrared array performance," Appl. Opt. 24, 2549-2557 (1985)

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Abstract

Three 2 × 64 element Si:Bi accumulation-mode charge-injection-device (CID) arrays were tested at low and moderate background to evaluate their usefulness for space-based astronomical observations. Testing was conducted both in the laboratory and in ground-based telescope IR observations. The devices showed an average readout noise level below 200 equivalent electrons, a peak responsivity of 4 A/W, and a noise equivalent power of 3 × 10⁻¹⁷ W/Hz^1/2. This sensitivity compares well with that of nonintegrating discrete extrinsic silicon photoconductors. The array well capacity was significantly smaller than predicted. The measured sensitivity makes extrinsic silicon CID arrays useful for certain astronomical applications. However, their readout efficiency and frequency response represent serious limitations in low-background applications.

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Center wavelength (μm)	Bandwidth (μm)	Peak transmittance (%)
3.6137	0.0341	94
4.6170	0.0373	81
11.03	0.064	72

Characteristic	Data	Units	Conditions
General
Material	Si:Bi
Dopant concentration	4 × 10¹⁶	atoms/cm³
Layout	2 × 64	element
Pixel dimensions	180	micrometer	Square
Pixel spacing	220	micrometer	Lengthwise
Wavelength range	3 – 18	micrometer
Test backgrounds	2 × 10³–4 × 10⁷	photons/sec
	6 × 10⁶–1 × 10¹¹	photons/cm²-sec
Performance
Responsivity	2.4	A/W	at 11 μm
	4.0	A/W	at 16 μm (est)
Responsive quantum efficiency	27	%	at 11 μm
Read noise	150	electrons/sample	rms
NEP	3 × 10⁻¹⁷	$W / \sqrt{Hz}$	t _i = 256 msec
			Background = 2.3E5 photons/sec
			λ = 11 μm
Input capacitance	4	pF
Dark current	<1.6 × 10⁻¹⁷	A
	<100	electrons/sec
Well capacity	5 × 10⁵	electrons
Maximum integration time	80	minutes	Dark current limited
Frequency response	0–20	hertz	Background = 4E7 photons/sec
	0–2	hertz	Background = 2E5 photons/sec
Max read rate	500	Frames/sec
Operating temperature	8–14	K
Uniformity	10	%	1 sigma/mean

	Array serial number
	8101	8106	8107
Uniformity (1σ)	35%	40%	25%
Responsivity (A/W)	1.9	1.9	2.4
Quantum efficiency	23%	23%	27%
Noise electrons	248	293	150
$NEP (W / \sqrt{Hz})$	7E-16	7E-16	3E-17
Dead pixel pairs	3	0	6
R _L C_in − limited 3-dB frequency	(1243,1184)	(938,1058)	(1243,1275)
(Ch 1, Ch 2) (Hz)
C_in (Ch 1, Ch 2) (pF)	(4.0,4.2)	(5.3,4.7)	(4.0,3.9)

Center wavelength (μm)	Bandwidth (μm)	Peak transmittance (%)
3.6137	0.0341	94
4.6170	0.0373	81
11.03	0.064	72

Characteristic	Data	Units	Conditions
General
Material	Si:Bi
Dopant concentration	4 × 10¹⁶	atoms/cm³
Layout	2 × 64	element
Pixel dimensions	180	micrometer	Square
Pixel spacing	220	micrometer	Lengthwise
Wavelength range	3 – 18	micrometer
Test backgrounds	2 × 10³–4 × 10⁷	photons/sec
	6 × 10⁶–1 × 10¹¹	photons/cm²-sec
Performance
Responsivity	2.4	A/W	at 11 μm
	4.0	A/W	at 16 μm (est)
Responsive quantum efficiency	27	%	at 11 μm
Read noise	150	electrons/sample	rms
NEP	3 × 10⁻¹⁷	$W / \sqrt{Hz}$	t _i = 256 msec
			Background = 2.3E5 photons/sec
			λ = 11 μm
Input capacitance	4	pF
Dark current	<1.6 × 10⁻¹⁷	A
	<100	electrons/sec
Well capacity	5 × 10⁵	electrons
Maximum integration time	80	minutes	Dark current limited
Frequency response	0–20	hertz	Background = 4E7 photons/sec
	0–2	hertz	Background = 2E5 photons/sec
Max read rate	500	Frames/sec
Operating temperature	8–14	K
Uniformity	10	%	1 sigma/mean

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Applied Optics