Abstract

Ion-assisted deposition has been used to deposit lanthanum fluoride thin films with near-unity film packing densities and no significant increase in absorption. Rutherford backscattering analysis has determined the effect of ion bombardment on the film stoichiometries including the degree of fluorine deficiency. Oxygen atoms or compounds appear to occupy most of the available anion vacancies if sufficient oxygen is available in the ion beam or the residual atmosphere.

© 1987 Optical Society of America

Properties of CeO₂ thin films prepared by oxygen-ion-assisted deposition

Roger P. Netterfield, W. G. Sainty, P. J. Martin, and S. H. Sie
Appl. Opt. 24(14) 2267-2272 (1985)

Influence of ion assistance on the optical properties of MgF₂

Philip J. Martin, Wayne G. Sainty, Roger P. Netterfield, David R. McKenzie, David J. H. Cockayne, Soey H. Sie, Obert R. Wood, and Harold G. Craighead
Appl. Opt. 26(7) 1235-1239 (1987)

Ion-beam-assisted deposition of thin films

P. J. Martin, H. A. Macleod, R. P. Netterfield, C. G. Pacey, and W. G. Sainty
Appl. Opt. 22(1) 178-184 (1983)

Reactive ion assisted deposition of aluminum oxynitride thin films

Chang Kwon Hwangbo, Linda J. Lingg, John P. Lehan, H. Angus Macleod, and F. Suits
Appl. Opt. 28(14) 2779-2784 (1989)

Influence of ion assistance on LaF₃ films deposited by molybdenum boat evaporation

Ming-Chung Liu, Cheng-Chung Lee, Masaaki Kaneko, Kazuhide Nakahira, and Yuuichi Takano
Appl. Opt. 51(15) 2865-2869 (2012)