Abstract

The amorphous to crystalline transition in the semiconductor GaSb has been studied as a recording mechanism for write-once optical storage. Amorphous as-deposited films, 100 nm thick, are transformed locally to the crystalline state by a focused laser beam. This recording process can be accomplished within 10 ns. The dimensions of the crystalline marks can be accurately controlled. Optical storage media based on GaSb are suitable for the archival storage of information modulated according to the compact disk format.

© 1987 Optical Society of America

Materials developments for write-once and erasable phase-change optical recording

Dirk J. Gravesteijn
Appl. Opt. 27(4) 736-738 (1988)

Thermal properties and crystallization dynamics of a phase-change alloy for write-once optical data storage

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Static tester for characterization of phase-change, dye–polymer, and magneto-optical media for optical data storage

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Superresolution near-field readout in phase-change optical disk data storage

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Behavior of GeSbTeBi phase-change optical recording media under subnanosecond pulsed laser irradiation

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