Abstract

Using the thermal self-electrooptic effect, optical bistability is observed in a hybrid etalon of semi-insulating GaAs:Cr material at the nonresonant wavelength of 1.06 μm. The nonlinearity is traced back to a temperature-dependent index of refraction, largely enhanced by the optoelectronically induced electrical power arising from photocurrent flow. The optical absorption is attributed to bandtailing effects due to the trapping centers. Optoelectronic and gate operation between optical and electrical input signals is achieved.

© 1988 Optical Society of America

Optical digital processor using arrays of symmetric self-electrooptic effect devices

Michael E. Prise, Nicholas C. Craft, M. M. Downs, R. E. LaMarche, L. A. D’Asaro, Leo M. F. Chirovsky, and Miles J. Murdocca
Appl. Opt. 30(17) 2287-2296 (1991)

Module for optical logic circuits using symmetric self-electrooptic effect devices

Michael E. Prise, N. C. Craft, R. E. LaMarche, M. M. Downs, S. J. Walker, L. A. D’Asaro, and L. M. F. Chirovsky
Appl. Opt. 29(14) 2164-2170 (1990)

Large optical nonlinearities in hybrid semiconductor devices

D. Jäger
J. Opt. Soc. Am. B 6(4) 588-594 (1989)

Highly cascadable optically bistable device for large fan-out optical computing uses

Nicholas C. Craft
Appl. Opt. 27(9) 1764-1768 (1988)

Quantum confined Stark effect of excitonic transitions in GaAs/AlGaAs MQW structures for implementation of neural networks: basic device requirements

Jasprit Singh, Songcheol Hong, Pallab K. Bhattacharya, and Rajeshwar Sahai
Appl. Opt. 27(21) 4554-4561 (1988)