Abstract

The loss caused by internal reflection from a plane surface is 97.3% for a radiative–ecombination light source in a semiconductor material, such as Si or GaAs, with an index of refraction of 3.56 at the radiating wavelength. Efficient light transfer between such a light source and a photoreceiver with a similarly high-refractive index may be accomplished by a light pipe with a comparably high refractive index.

© 1964 Optical Society of America

Transmission of Isotropic Radiation Across an Interface Between Two Dielectrics

Frank Stern
Appl. Opt. 3(1) 111-113 (1964)

Comparison of Monochromatic Semiconductor Radiation Sources with Tungsten Lamps

O. A. Weinreich and S. Mayburg
Appl. Opt. 3(12) 1489-1493 (1964)

Refractive Indices of Ammonium Dihydrogen Phosphate and Potassium Dihydrogen Phosphate between 2000 Å and 1.5 μ

Frits Zernike
J. Opt. Soc. Am. 54(10) 1215-1220 (1964)

High-Precision Pointing Interferometer

Gerald H. Lovins
Appl. Opt. 3(7) 883-887 (1964)

A Multi-Image Optical System

Dmetro Andrychuk
Appl. Opt. 3(8) 933-938 (1964)