Abstract

The low-pressure chemical vapor deposition of silicon–oxynitride films for applications as integrated optical waveguides on silicon substrates, using gas compositions of SiH₂Cl₂–NH₃–N₂O, SiH₂Cl₂–NH₃–O₂, and SiH₄–NH₃–O₂, has been investigated with respect to deposition rate, uniformity, reproducibility in the 1.46–2 index range, and propagating loss. The best results were obtained with the SiH₂Cl₂–NH₃–O₂ reaction, which provides a deposition rate up to 30 nm/min and a thickness variation across a wafer below 3% at propagation losses below 0.5 dB/cm.

© 1992 Optical Society of America

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